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U-GaN

U-GaN

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0983.912.259 Zalo Email

U-GaN là thiết bị đo cường độ ánh sáng uv, thiết bị đo năng lượng ánh sáng uv

Feature
Undoped GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Image Series Name Parts Number Size(mm3) Spec-sheet
green led Epi Wafer Undoped GaN 2″ (50.8㎜) ico pdf en 3
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 362nm±2nm Accent RPM2000
– Laser : 266nm Nd-YG
– 3mm Edge Exclude
Uniformity STD <3%
FWHM <10㎚
FWHM STD <3%
Thickness Thickness 2㎛+/-10%
Thickness STD <10%
XRD (002) <350 arcsec Panalytical
HRXRD
(102) <450 arcsec
Hall Carrier Concentration < -1×1017 /㎝ Accent
HL5500
Mobility >200 ㎠/V·sec
Doping material Si N/A –
Mg N/A