Green LED

Green LED

Feature
Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
p-GaN / MQWs /
n-GaN / u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Image Series Name Parts Number Size(mm3) Spec-sheet
green led Epi Wafer Green LED 2″ (50.8㎜)
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 510㎚±10㎚ Accent RPM2000
– Laser : 266nm Nd-YG
– 3mm Edge Exclude
Uniformity STD <3%
FWHM <100㎚
FWHM STD <20%
Thickness Thickness 4.8㎛+/-10%
Thickness STD <10%
XRD (002) N/A Panalytical
HRXRD
(102) N/A
Hall Carrier Concentration N/A Accent
HL5500
Mobility N/A
Doping material Si used
Mg used