P-GaN

Feature
p-Type GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
p-GaN / u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Image Series Name Parts Number Size(mm3) Spec-sheet
green led Epi Wafer p-Type GaN 2″ (50.8㎜) ico pdf en 3
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 362nm±2nm Accent RPM2000
– Laser : 266nm Nd-YG
– 3mm Edge Exclude
Uniformity STD <3%
FWHM <10㎚
FWHM STD <3%
Thickness Thickness 0.8㎛+/-10%
Thickness STD <10%
XRD (002) N/A Panalytical
HRXRD
(102) N/A
Hall Carrier Concentration N/A Accent
HL5500
Mobility N/A
Doping material Si N/A
Mg used