N-GaN

Feature
n-Type GaN Epi. Wafer
Single side polished (Growth surface)
Thickness (Included substrate)
430㎛±15㎛
Structure
n-GaN / u-GaN / Sapphire substrate
Nomalized Single Spectrum
300 ~ 700nm
Image Series Name Parts Number Size(mm3) Spec-sheet
green led Epi Wafer n-Type GaN 2″ (50.8㎜) ico pdf en 3
Characteristics (at 25℃)
Parameter Typ. Test Conditions
PL measurement Peak wavelength 362nm±2nm Accent RPM2000
– Laser : 266nm Nd-YG
– 3mm Edge Exclude
Uniformity STD <3%
FWHM <10㎚
FWHM STD <3%
Thickness Thickness 4㎛+/-10%
Thickness STD <10%
XRD (002) <400 arcsec Panalytical
HRXRD
(102) <500 arcsec
Hall Carrier Concentration < -1×1018 /㎝ Accent
HL5500
Mobility >200 ㎠/V·sec
Doping material Si used
Mg N/A