N-GaN

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Categories: Epi Service, GENUV, N-GaN

Feature

n-Type GaN Epi. Wafer
Single side polished (Growth surface)

Thickness (Included substrate)

430㎛±15㎛

Structure

n-GaN / u-GaN / Sapphire substrate

Nomalized Single Spectrum

300 ~ 700nm

Image	Series Name	Parts Number	Size(mm3)	Spec-sheet
	Epi Wafer	n-Type GaN	2″ (50.8㎜)

Characteristics (at 25℃)

Parameter		Typ.	Test Conditions
PL measurement	Peak wavelength	362nm±2nm	Accent RPM2000 – Laser : 266nm Nd-YG – 3mm Edge Exclude
	Uniformity STD	<3%
	FWHM	<10㎚
	FWHM STD	<3%
Thickness	Thickness	4㎛+/-10%
Thickness	Thickness STD	<10%
XRD	(002)	<400 arcsec	Panalytical HRXRD
XRD	(102)	<500 arcsec	Panalytical HRXRD
Hall	Carrier Concentration	< -1×10¹⁸ /㎝	Accent HL5500
Hall	Mobility	>200 ㎠/V·sec	Accent HL5500
Doping material	Si	used	–
Doping material	Mg	N/A	–